SiC Plasma and Electrochemical Etching for Integrated Technology Processes
نویسندگان
چکیده
This paper reports research on deep etching of silicon carbide (SiC) to achieve isolated trenches in the same thick SiC substrates. combines both plasma and electrochemical p-type above n-type layers. Uniform
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ژورنال
عنوان ژورنال: Romanian Journal of Information Science and Technology
سال: 2023
ISSN: ['1453-8245']
DOI: https://doi.org/10.59277/romjist.2023.2.10